Semiconductor device and method of manufacturing the same

ABSTRACT

A plurality of origin patterns ( 3 ) containing a metal catalyst are formed over a semiconductor substrate ( 1 ). Next, an insulating film ( 4 ) covering the origin patterns ( 3 ) is formed. Next, a trench allowing at the both ends thereof the side faces of the origin patterns ( 3 ) to expose is formed. Thereafter, a wiring is formed by allowing carbon nanotubes ( 5 ) having a conductive chirality to grow in the trench. Thereafter, an insulating film covering the carbon nanotubes ( 5 ) is formed.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a divisional application of Ser. No. 11/785,623,filed Apr. 19, 2007, which is a continuation of PCT/JP04/15732 filed onOct. 22, 2004, the entire contents of which being incorporated herein byreference.

TECHNICAL FIELD

The present invention relates to a semiconductor device using carbonnanotubes, and a method of manufacturing the same.

BACKGROUND ART

There are growing demands on miniaturization of semiconductor devices,and consequently also on increase in current density required forwirings. According to the International Technology Road Map forSemiconductors (2002), maximum wiring current density necessary forsemiconductor devices will rise almost close to 2×10⁶(A/cm²) at around2005 or thereafter, which cannot be achieved by the conventional Cuwirings or the like.

One candidate of wiring materials capable of solving this sort ofproblem can be exemplified by carbon nanotube. Maximum current densityof wiring made of carbon nanotubes is at an order of magnitude of 10⁹(A/cm²), approximately 1,000 times as large as that of the Cu wirings.The electric resistance thereof is known to be observed as a quantizedresistance of approximately 6 kΩ per a single carbon nanotube. Lowresistance wirings can therefore be formed by increasing the number ofcarbon nanotubes.

The carbon nanotubes can be configured as semiconductors by controllingthe chirality, and has therefore been investigated about their use as achannel of a field effect transistor. In this sort of field effecttransistor, it is generally believed that conductance per unit width isseveral times as large as an N-channel transistor formed in a Sisubstrate, and as large as approximately 10 times as large as aP-channel transistor.

As one conventional method of forming a wiring composed of carbonnanotubes, there has been known a method of growing carbon nanotubes bya thermal CVD process or a plasma CVD process, selectively from thesurface of a metal catalyst such as cobalt, nickel, iron or the like.

For example, Japanese Laid-Open Patent Publication No. 2002-329723describes a method of forming a via-plug using carbon nanotubes, byallowing the carbon nanotubes to grow on a pattern of a metal catalystin the vertical direction by a CVD process. The publication alsodescribes a method of forming horizontally-extending wirings, byallowing the carbon nanotubes to grow, while being applied with electricfield in the horizontal direction.

Japanese Laid-Open Patent Publication No. 2002-118248 describes a methodof forming wirings horizontally extending as explained below. First, aline pattern of metal catalyst is formed, and a vertical growthsuppressive layer is then formed thereon. Next, an opening is formed bya single process in the vertical growth suppressive layer and the linepattern. Carbon nanotubes are then grown between the patterns opposed inthe opening. A description is made also on another method, in which avertical growth suppressive layer is selectively formed, the linepattern is patterned, and the carbon nanotubes are grown thereafter.

Wolfgang Hoenlein (Jpn. J. Appl. Phys., Vol. 41 (2002) pp. 4370-4374)illustrates a carbon nanotube wiring applied by a damascene process, butno description is given on a method of forming the wiring.

It is, however, difficult to control the growth direction and the lengthof the carbon nanotubes in the method disclosed in Japanese Laid-OpenPatent Publication No. 2002-329723. The method described in JapaneseLaid-Open Patent Publication No. 2002-118248 is in need of forming theopening by a single process in the vertical growth suppressive layer andthe line pattern of metal catalyst. It is, however, difficult to etchthe metal catalyst such as Co, Ni, iron and the like, and the verticalgrowth suppressive layer in a series of process. In particular, thedifficulty grows to a considerable degree, when the metal catalyst isthick. Moreover, any attempt of etching the metal catalyst by dryetching may cause adhesion of by-products on the side wall of theopening, from where the carbon nanotubes may undesirably grow. Themethod of selectively forming the vertical growth suppressive layersuffers from difficulty in controlling the direction of growth of thecarbon nanotubes.

In the above-described literatures, there are no descriptions aboutmethods of growing carbon nanotubes. It is also anticipated that thestructure, having the metal catalyst selectively formed in a part ofindividual contacts, will be complicated.

[Patent Document 1] Japanese Laid-Open Patent Publication No.2002-329723

[Patent Document 2] Japanese Laid-Open Patent Publication No.2002-118248

[Non-Patent Document 1] Wolfgang Hoenlein (Jpn. J. Appl. Phys., Vol. 41(2002), pp. 4370-4374)

SUMMARY OF THE INVENTION

It is a first object of the present invention to provide a semiconductordevice having wirings composed of carbon nanotubes appropriatelyextending in the direction in parallel with the surface of a substrate,and a method of manufacturing the same.

It is a second object of the present invention to provide asemiconductor device having a channel composed of carbon nanotubesappropriately extending in the direction in parallel with the surface ofa substrate, and a method of manufacturing the same.

After extensive investigations aimed at solving the above-describedproblems, the present inventor has conceived various embodiments of thepresent invention described below.

A first semiconductor device according to the present invention has aninsulating film formed over a semiconductor substrate. The insulatingfilm has a trench formed therein. In the trench, a wiring composed ofcarbon nanotubes is formed.

A second semiconductor device according to the present invention has asemiconductor substrate; a plurality of semiconductor elements formed onthe surface of the semiconductor substrate; and a multi-layered wiringconnecting the semiconductor elements. At least a portion of themulti-layered wiring extending in parallel with the surface of thesubstrate is composed of carbon nanotubes exposed to an external.

In a first method of manufacturing a semiconductor device according tothe present invention, a plurality of origin patterns containing a metalcatalyst are formed over a semiconductor substrate, and an insulatingfilm covering the origin patterns is then formed. Next, a trenchallowing at the both ends thereof the side faces of the origin patternto expose is formed in the insulating film. Next, a wiring is formed inthe trench by allowing carbon nanotubes having a conductive chirality togrow therein. An interlayer insulating film covering the carbonnanotubes is then formed.

In a second method of manufacturing a semiconductor device according tothe present invention, at least two origin patterns containing a metalcatalyst are formed over a semiconductor substrate, and an insulatingfilm covering the origin patterns is then formed. Next, a trenchallowing at the both ends thereof the side faces of the origin patternsto expose is formed in the insulating film. A channel is then formed inthe trench, by allowing carbon nanotubes having a semiconductivechirality to grow therein.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A is a plan view showing a method of manufacturing a semiconductordevice according to a first embodiment of the present invention;

FIG. 1B is a sectional view taken along line I-I in FIG. 1A;

FIG. 2A is a plan view showing, as continued from FIG. 1A, the method ofmanufacturing a semiconductor device according to the first embodiment;

FIG. 2B is a sectional view taken along line I-I in FIG. 2A;

FIG. 3A is a plan view showing, as continued from FIG. 2A, the method ofmanufacturing a semiconductor device according to the first embodiment;

FIG. 3B is a sectional view taken along line I-I in FIG. 3A;

FIG. 4A is a plan view showing, as continued from FIG. 3A, the method ofmanufacturing a semiconductor device according to the first embodiment;

FIG. 4B is a sectional view taken along line I-I in FIG. 4A;

FIG. 5A is a plan view showing, as continued from FIG. 4A, the method ofmanufacturing a semiconductor device according to the first embodiment;

FIG. 5B is a sectional view taken along line I-I in FIG. 5A;

FIG. 6A is a plan view showing, as continued from FIG. 5A, the method ofmanufacturing a semiconductor device according to the first embodiment;

FIG. 6B is a sectional view taken along line I-I in FIG. 6A;

FIG. 7A is a plan view showing, as continued from FIG. 6A, the method ofmanufacturing a semiconductor device according to the first embodiment;

FIG. 7B is a sectional view taken along line I-I in FIG. 7A;

FIG. 8A is a plan view showing, as continued from FIG. 7A, the method ofmanufacturing a semiconductor device according to the first embodiment;

FIG. 8B is a sectional view taken along line I-I in FIG. 8A;

FIG. 9A is a plan view showing, as continued from FIG. 8A, the method ofmanufacturing a semiconductor device according to the first embodiment;

FIG. 9B is a sectional view taken along line I-I in FIG. 9A;

FIG. 10A is a plan view showing, as continued from FIG. 9A, the methodof manufacturing a semiconductor device according to the firstembodiment;

FIG. 10B is a sectional view taken along line in FIG. 10A;

FIG. 11 is a sectional view showing a structure of a semiconductordevice manufactured as being applied with the first embodiment;

FIG. 12A is a plan view showing a method of manufacturing asemiconductor device according to a second embodiment of the presentinvention;

FIG. 12B is a sectional view taken along line I-I in FIG. 12A;

FIG. 13A is a plan view showing, as continued from FIG. 12A, the methodof manufacturing a semiconductor device according to the secondembodiment;

FIG. 13B is a sectional view taken along line I-I in FIG. 13A;

FIG. 14A is a plan view showing, as continued from FIG. 13A, the methodof manufacturing a semiconductor device according to the secondembodiment;

FIG. 14B is a sectional view taken along line I-I in FIG. 14A;

FIG. 15A is a plan view showing, as continued from FIG. 14A, the methodof manufacturing a semiconductor device according to the secondembodiment;

FIG. 15B is a sectional view taken along line I-I in FIG. 15A;

FIG. 16A is a plan view showing, as continued from FIG. 15A, the methodof manufacturing a semiconductor device according to the secondembodiment;

FIG. 16B is a sectional view taken along line I-I in FIG. 16A;

FIG. 17A is a plan view showing an exemplary in which a growthsuppressive films 21 are formed;

FIG. 17B is a sectional view taken along line I-I in FIG. 17A;

FIG. 18A is a plan view showing an exemplary in which dot patterns 23having a reverse-tapered sectional geometry are formed;

FIG. 18B is a sectional view taken along line I-I in FIG. 18A;

FIG. 19A is a plan view showing an exemplary in which anti-oxidationfilms 22 are formed;

FIG. 19B is a sectional view taken along line I-I in FIG. 19A;

FIG. 20A is a plan view showing a method of covering the surface of dotpatterns 3 with a metal catalyst film;

FIG. 20B is a sectional view taken along line I-I in FIG. 20A;

FIG. 21A is a plan view showing, as continued from FIG. 20A, the methodof covering the surface of dot patterns 3 with a metal catalyst film;

FIG. 21B is a sectional view taken along line I-I in FIG. 21 A;

FIG. 22A is a plan view showing, as continued from FIG. 21A, the methodof covering the surface of dot patterns 3 with a metal catalyst film;

FIG. 22B is a sectional view taken along line I-I in FIG. 22A;

FIG. 23A is a plan view showing, as continued from FIG. 22A, the methodof covering the surface of dot patterns 3 with a metal catalyst film;

FIG. 23B is a sectional view taken along line I-I in FIG. 23A;

FIG. 24A is a plan view showing an exemplary in which a damasceneprocess is adopted;

FIG. 24B is a sectional view taken along line I-I in FIG. 24A;

FIG. 25A is a plan view showing, as continued from FIG. 24A, theexemplary in which a damascene process is adopted;

FIG. 25B is a sectional view taken along line I-I in FIG. 25A;

FIG. 26A is a plan view showing, as continued from FIG. 25A, theexemplary in which a damascene process is adopted;

FIG. 26B is a sectional view taken along line I-I in FIG. 26A;

FIG. 27A is a plan view showing, as continued from FIG. 26A, theexemplary in which a damascene process is adopted;

FIG. 27B is a sectional view taken along line I-I in FIG. 27A;

FIG. 28 is a sectional view showing an exemplary in which interlayerinsulating films are removed;

FIG. 29A is a plan view showing a method of manufacturing asemiconductor device according to a third embodiment of the presentinvention;

FIG. 29B is a sectional view taken along line II-II in FIG. 29A;

FIG. 30A is a plan view showing, as continued from FIG. 29A, the methodof manufacturing a semiconductor device according to the thirdembodiment;

FIG. 30B is a sectional view taken along line II-II in FIG. 30A;

FIG. 31A is a plan view showing, as continued from FIG. 30A, the methodof manufacturing a semiconductor device according to the thirdembodiment;

FIG. 31B is a sectional view taken along line II-II in FIG. 31A;

FIG. 32A is a plan view showing, as continued from FIG. 31A, the methodof manufacturing a semiconductor device according to the thirdembodiment;

FIG. 32B is a sectional view taken along line II-II in FIG. 32A;

FIG. 33A is a plan view showing, as continued from FIG. 32A, the methodof manufacturing a semiconductor device according to the thirdembodiment;

FIG. 33B is a sectional view taken along line II-II in FIG. 33A;

FIG. 34A is a plan view showing, as continued from FIG. 33A, the methodof manufacturing a semiconductor device according to the thirdembodiment;

FIG. 34B is a sectional view taken along line II-II in FIG. 34A;

FIG. 35A is a plan view showing, as continued from FIG. 34A, the methodof manufacturing a semiconductor device according to the thirdembodiment;

FIG. 35B is a sectional view taken along line II-II in FIG. 35A;

FIG. 36A is a plan view showing, as continued from FIG. 35A, the methodof manufacturing a semiconductor device according to the thirdembodiment;

FIG. 36B is a sectional view taken along line II-II in FIG. 36A;

FIG. 37A is a plan view showing, as continued from FIG. 36A, the methodof manufacturing a semiconductor device according to the thirdembodiment;

FIG. 37B is a sectional view taken along line II-II in FIG. 37A;

FIG. 38A is a plan view showing, as continued from FIG. 37A, the methodof manufacturing a semiconductor device according to the thirdembodiment;

FIG. 38B is a sectional view taken along line II-II in FIG. 38A;

FIG. 39A is a plan view showing, as continued from FIG. 38A, the methodof manufacturing a semiconductor device according to the thirdembodiment;

FIG. 39B is a sectional view taken along line II-II in FIG. 39A;

FIG. 40A is a plan view showing, as continued from FIG. 39A, the methodof manufacturing a semiconductor device according to the thirdembodiment;

FIG. 40B is a sectional view taken along line II-II in FIG. 40A;

FIG. 41 is a sectional view showing an exemplary in which a metalcatalyst layer 67 is formed on a gate electrode 58;

FIG. 42 is a sectional view showing a semiconductor device in which ametal catalyst layer 67 is formed on a gate electrode 58;

FIG. 43A is a plan view showing a method of manufacturing asemiconductor device according to a fourth embodiment of the presentinvention;

FIG. 43B is a sectional view taken along line II-II in FIG. 43A;

FIG. 44A is a plan view showing, as continued from FIG. 43A, the methodof manufacturing a semiconductor device according to the fourthembodiment;

FIG. 44B is a sectional view taken along line II-II in FIG. 44A;

FIG. 45A is a plan view showing, as continued from FIG. 44A, the methodof manufacturing a semiconductor device according to the fourthembodiment;

FIG. 45B is a sectional view taken along line II-II in FIG. 45A;

FIG. 46A is a plan view showing an exemplary in which a back gatestructure is adopted;

FIG. 46B is a sectional view taken along line II-II in FIG. 46A;

FIG. 47A is a block diagram showing an inverter;

FIG. 47B is a layout chart showing the inverter;

FIG. 47C is a circuit drawing showing the inverter; FIG. 48 is asectional view showing a method of forming an inverter; and

FIG. 49 is a sectional view showing an exemplary in which an oxygenblocking film 86 is formed.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Paragraphs below will specifically explain embodiments of the presentinvention, referring to the attached drawings. It is to be noted thatthe sectional views of the semiconductor device will be explained inconjunction with methods of manufacturing the same, for the conveniencesake.

First Embodiment

In the beginning, a first embodiment of the present invention will beexplained. FIG. 1A and FIG. 1B to FIG. 10A and to FIG. 10B are drawingssequentially showing process steps of a method of manufacturing asemiconductor device according to the first embodiment of the presentinvention. FIG. 1B to FIG. 10B are sectional views taken along line I-Iin FIG. 1A to FIG. 10A, respectively.

In this embodiment, first as shown in FIG. 1A and FIG. 1B, a Si oxidefilm 2 is formed on a semiconductor substrate 1, by using TEOS(tetraethylorthosilicate), for example. On the Si oxide film 2, dotpatterns 3 composed of a metal catalyst for carbon nanotubes are thenformed. Examples of the metal catalyst include cobalt (Co), nickel (Ni),iron (iron) and so forth. Positions of formation of the dot patterns 3are set to end portions and inflection points of wirings. This isbecause, in many cases, the carbon nanotubes linearly grow over theminimum distance between catalyst patterns. Sectional geometry involvingheight and width of the dot patterns 3 is determined depending onthickness of wirings (the number of carbon nanotubes) to be formed, thatis, resistance required for the wirings to be formed. The side faces ofthe dot patterns 3 are not necessarily vertical, and may beforward-tapered or reverse-tapered.

Next, as shown in FIG. 2A and FIG. 2B, an interlayer insulating film 4covering the dot patterns 3 is formed by using TEOS, for example, andthe surface thereof is then planarized by CMP (Chemical MechanicalPolishing) or the like.

Thereafter, as shown in FIG. 3A and FIG. 3B, trenches 4 a are formed inthe interlayer insulating film 4 by dry etching, for example, atpositions destined for formation of the wirings. This process isproceeded so as to expose, from both ends of the trench 4 a, the sidefaces of the dot patterns 3. This is because the side faces of the dotpatterns 3 can serve as origins of growth of carbon nanotubes. Inconsideration of alignment accuracy in the process of forming thetrenches 4 a, it is preferable to adopt a design in which both ends ofthe trenches 4 a fall on the top surfaces of the dot patterns 3. Inother words, it is preferable to adopt a design in which the dotpatterns 3 are slightly exposed out from the trenches 4 a. By adoptingthis design, the side faces of the dot patterns 3 can exactly beexposed, even if any slight misalignment should occur.

In a case where polymers or oxide of the metal catalysts adhere on theside faces of the dot patterns 3 after formation of the trenches 4 a, itis preferable to carry out isotropic etching (plasma treatment or wettreatment).

Thereafter, as shown in FIG. 4A and FIG. 4B, carbon nanotubes 5 havingan armchair-type chirality (geometric structure) are grown as beingoriginated from the dot patterns 3 by a thermal CVD process or a plasmaCVD process. In this process, most of the carbon nanotubes 5 growbetween the opposing dot patterns 3, but a part of the carbon nanotubes5 grows upward from the top surfaces of the dot patterns 3.

Next, as shown in FIG. 5A and FIG. 5B, a protective film 6 protectingthe carbon nanotubes 5 from any damages possibly caused by CMP carriedout later is formed. The protective film 6 is preferably formed at leastto a thickness enough to bury the trenches 4 a, that is, at least to athickness enough to cover the carbon nanotubes 5 between the dotpatterns 3. As the protective film 6, a silicon nitride film or anelectro-conductive film is preferably formed, in view of avoidingoxidation of the carbon nanotubes 5. It is also allowable to form aninsulating film by sputtering. In view of paying more attention tooxidation of the carbon nanotubes 5, it is also allowable to use asilicon oxide film as the protective film 6.

The protective film 6 is omissible, if the carbon nanotubes 5 showsenough strength against CMP.

Next, as shown in FIG. 6A and FIG. 6B, the interlayer insulating film 4,the carbon nanotubes 5 and the protective film 6 are removed by CMP orthe like, until the dot patterns 3 are exposed.

Next, as shown in FIG. 7A and FIG. 7B, an interlayer insulating film 7is formed over the entire surface with using TEOS, for example. Up tothese process steps, a series of process steps of forming the carbonnanotube wiring in the first layer are completed.

Thereafter, as shown in FIG. 8A and FIG. 8B, openings (via holes) 7 aare formed in the interlayer insulating film 7 so as to reach the dotpattern 3. It is, however, not necessary to form the openings 7 a on allof the dot patterns.

Next, as shown in FIG. 9A and FIG. 9B, the carbon nanotubes 8 arevertically grown by a thermal CVD process or a plasma CVD process, asbeing originated from the dot patterns 3.

Next, as shown in FIG. 10A and FIG. 10B, portions of the carbonnanotubes 8 projected out from the interlayer insulating film 7 areremoved by CMP or the like. As a consequence, a structure havingvia-plugs buried in the openings 7 a is obtained.

Wirings and so forth in the second layer and thereafter are then formedby similar processes, to thereby complete a semiconductor device.

According to the first embodiment as described above, the wiringscomposed of carbon nanotubes can readily be formed with an excellentaccuracy at desired positions.

It is to be noted that the geometry of the dot patterns 3 is preferablydetermined depending on resistance required for the wirings to be formedas described above, and it is preferable that also the width and heightof the trenches 4 a are determined based on the resistance of thewirings. The carbon nanotubes 5 formed in the trenches 4 a are varied intheir number of formation per unit area or characteristics such asconductivity depending on their conditions of growth. It is thereforepreferable to determine the geometry of the trenches 4 a and theconditions of growth so as to successfully obtain desired resistivity.As for the width of the dot patterns 3 and the width of the trenches 4a, either one may be larger, or the both may be equivalent.

A structure of a semiconductor device manufactured as being applied withthe first embodiment will be given as shown in FIG. 11. Morespecifically, MOS transistors 102, capacitors 103 and so forth areformed on a semiconductor substrate 101, and an interlayer insulatingfilm 104 is formed so as to cover these components. The interlayerinsulating film 104 has the openings which reach electrodes of the MOStransistors 102, the capacitors 103 and so forth, and has W plugs 105formed therein. On and above the interlayer insulating film 104, thereare formed a plurality of origin patterns 106 containing a metalcatalyst, a plurality of wirings 107 and via-plugs 108 composed ofcarbon nanotubes. Each of pad layers 109 is composed, for example, of abarrier metal film 109 a, an Al film 109 b and a barrier metal film 109c.

Second Embodiment

Next, a second embodiment of the present invention will be explained. Inthe second embodiment, wirings and via-plugs composed of carbonnanotubes are formed at the same time. FIG. 12A and FIG. 12B to FIG. 16Aand FIG. 16B are drawing sequentially showing process steps of themethod of manufacturing a semiconductor device according to the secondembodiment of the present invention.

In the second embodiment, the process steps up to the formation of thedot patterns 3 are carried out similarly to as in the first embodiment,and an interlayer insulating film 14 covering the dot patterns 3 is thenformed, as shown in FIG. 12A and FIG. 12B, with using TEOS, for example.Next, the surface thereof is planarized by CMP or the like. Trenches 14a are then formed in the interlayer insulating film 14 at positionsdestined for formation of the wirings by dry etching, for example. Thisprocess is proceeded so as to expose, from both ends of each trench 14a, not only the side faces but also the top surfaces of the dot patterns3. This is because the top surfaces of the dot patterns 3 can serve asthe origins of growth of the carbon nanotubes for forming the via-plugs.In consideration of alignment accuracy in the process of forming thetrenches 14 a, it is preferable to adopt a design in which both ends ofthe trenches 14 a fall on the top surfaces of the dot patterns 3. Inother words, it is preferable to adopt a design in which the dotpatterns 3 having the exposed top surfaces are slightly covered with theinterlayer insulating film 14. By adopting this design, the side facesof the dot patterns 3 can exactly be exposed so as to provide an areasufficient for formation of the via-plugs, even if any slightmisalignment occurs. It is, however, not necessary to expose the topsurfaces of all dot patterns 3, similar to the openings 7 a in the firstembodiment.

In a case where polymers or oxide of the metal catalysts adhere on theside faces of the dot patterns 3 after formation of the trenches 14 a,it is preferable, as the occasion demands, to carry out isotropicetching, similarly to as in the first embodiment.

Thereafter, as shown in FIG. 13A and FIG. 13B, carbon nanotubes 15 aregrown as being originated from the dot patterns 3, by a thermal CVDprocess or a plasma CVD process. In this process, the carbon nanotubes15 grow between the opposing dot patterns 3, and also grow upward fromthe top surfaces of the dot patterns 3.

Next, as shown in FIG. 14A and FIG. 14B, an interlayer insulating film16 is formed over the entire surface with using TEOS, for example, andportions of the carbon nanotubes 15 projected out from the interlayerinsulating film 16 are removed by CMP or the like. As a consequence, astructure having via-plugs formed in the layer composed of theinterlayer insulating films 14 and 16 is obtained.

Next, as shown in FIG. 15A and FIG. 15B, dot patterns 17 composed of ametal catalyst are formed at positions necessary for forming wirings inthe second layer or thereafter.

Next, as shown in FIG. 16A and FIG. 16B, an interlayer insulating film18 is formed so as to cover the dot patterns 17 with using TEOS, forexample, and the surface thereof is then planarized by CMP or the like.

Wirings and so forth in the second layer and thereafter are then formedby similar process steps, to thereby complete a semiconductor device.

According to the second embodiment as described above, the number ofprocess steps can be reduced because the process step of forming theprotective film 6 and any other processes associated therewith are notnecessary.

It is to be noted that, in the first embodiment, the carbon nanotubes 5unnecessarily grown upward in the process of growing the carbonnanotubes 5 between the dot patterns 3; therefore, the unnecessaryportions are removed, but it is also allowable to avoid the upwardgrowth of the carbon nanotubes 5 in the process of growing the carbonnanotubes 5. For example, as shown in FIG. 17A and FIG. 17B, growthsuppressive films 21 suppressing growth of the carbon nanotubes 5 may beformed on the dot patterns 3. As the growth suppressive film 21, eitherof a conductive film and an insulating film may be formed, so far as itwill not be etched off together with the interlayer insulating film 4 inthe process of forming the trenches 4 a, and so far as it can suppressgrowth of the carbon nanotubes 5, or in other words, so far as it showsetching selectivity over the interlayer insulating film 4, and so far asit does now show any catalytic function for the carbon nanotubes.Examples of this sort of a conductive film include an Al film, a Ti filmand a TiN film, and examples of this sort of an insulating film includea Si nitride film and an alumina film.

When such a growth suppressive film 21 is used, it is good enough toform source material films of the dot patterns 3 and the growthsuppressive film 21 in this order, and then to pattern these films. Whenthe via-plugs are formed, it is good enough, for example, to form theopenings (via-holes) 7 a in the interlayer insulating film 7, and thento form openings also in the growth suppressive film 21. When theopenings are formed in the growth suppressive film 21, it is preferableto adopt conditions capable of preventing the interlayer insulating film7 from being etched.

Moreover, when the growth suppressive film 21 is used, it is preferable,as shown in FIG. 18A and FIG. 18B, to make the sectional geometry of thedot patterns 23, which serve as the origins of growth of the carbonnanotube, reverse-tapered, that is, into a geometry narrowed towards thebottoms thereof. By using thus-shaped dot patterns 23, the carbonnanotubes 25 grown therebetween become less likely to swell out upward,and the process thereafter will further be simplified. Carbon nanotubesare likely to grow normal to the surface of a metal catalyst, but a partof which grows obliquely to the surface as shown in FIG. 4B. If thesectional geometry of the dot patterns is preliminarily madereverse-tapered, taking such properties into account, direction ofgrowth of the carbon nanotubes can be controlled to the lateral or moredownward direction, so that it is no more necessary to remove theportion swelled out upward in the later process. The reverse-tapered dotpatterns as described above are effective also for a case where thegrowth suppressive layer is not used, but they are more effective forthe case where the growth suppressive layer is used.

The reverse-tapered dot patterns described above can be formed bypromoting etching in the lateral direction, while making re-adhesion onthe side faces of the patterns less likely to occur during the etching,by controlling etching conditions for the source material film. They canbe formed also by adopting a damascene process as described later, andby making openings for forming the dot patterns as having aforward-tapered sectional geometry.

The carbon nanotubes 5 may undesirably oxidized, if the interlayerinsulating film 7 is formed under an oxidative atmosphere while leavingthe carbon nanotubes 5 exposed after the formation. In this case, it ispreferable, as shown in FIG. 19A and FIG. 19B, to form an anti-oxidationfilm 22 before the interlayer insulating film 7 is formed. Examples ofthe anti-oxidation film 22 include those possibly formed by a CVDprocess under a reductive atmosphere, such as silicon nitride film, andinsulating film (for example, alumina film, titania film, Si oxidefilm), and conductive film (Ti film, Al film), possibly formed bysputtering.

It is still also allowable to cover the surface of the dot patterns 3with a film composed of a metal catalyst. A method of forming the film,and effects thereof will be explained referring to FIG. 20A and FIG. 20Bto FIG. 23A and FIG. 23B.

In the beginning, a source material film for the dot patterns 3 and ametal catalyst film are sequentially formed on the Si oxide film 2, andthese films are then patterned, to thereby form the dot patterns 3 and ametal catalyst film 31, as shown in FIG. 20A and FIG. 20B. The metalcatalyst film 31 is composed, for example, of Co, Ni, Fe or the like.

Next, as shown in FIG. 21A and FIG. 21B, a metal catalyst film 32composed of the same metal with the metal catalyst film 31 is formedover the entire surface, by a CVD process, a PVD process, a platingprocess or the like.

Next, as shown in FIG. 22A and FIG. 22B, the metal catalyst films 31 and32 are anisotropically etched so as to leave them only at around the dotpatterns 3.

Thereafter, as shown in FIG. 23A and FIG. 23B, similarly to as in thefirst embodiment, the interlayer insulating film 4 is formed, and thetrenches 4 a are then formed.

According to this method, carbon nanotubes can grow as being originatedfrom the metal catalyst films 31 and 32, so that the dot patterns 3 maybe composed of any material other than a metal catalyst. Co, Ni and Fecan not be said as easy-to-etch, so that it is relatively difficult toshape the dot patterns 3 composed of any of these materials according todesired geometry. In contrast to this, use of the metal catalyst films31 and 32 allows use of Al, TiN, insulating material and so forth, whichare relatively easy-to-process, as the source materials for the dotpatterns 3, so that desired geometry can more readily be obtained.Because the geometry of the dot patterns 3 affects the direction ofgrowth of the carbon nanotubes originated therefrom, it is very valuablethat the dot patterns 3 can be formed with an excellent accuracy. If thedot patterns 3 composed of Ti are formed, it is also made possible toobtain ohmic contact between the carbon nanotubes and the dot patterns3.

Moreover, in a case where the metal catalyst films 31 and 32 are used,the dot patterns 3 may be composed of a plurality of layers. Forexample, a structure of the dot patterns 3 may be such as having an Albase, and a Ti film covering it. This structure can obtain advantages inthat the use of Al makes the processing simpler, and at the same time inthat the use of Ti ensures the ohmic contact.

The dot patterns can be formed not only by the formation of the sourcematerial film and the successive patterning as described above, but alsoby a damascene process. This method will be explained referring to FIG.24A and FIG. 24B to FIG. 27A and FIG. 27B.

In this method, first, as shown in FIG. 24A and FIG. 24B, an insulatingfilm 41 is formed over the Si oxide film 2, and openings 41 a are thenformed at positions destined for formation of dot patterns. Theinsulating film 41 is preferably composed of a material having anetching selectivity, for example, over the Si oxide film 2.

Next, as shown in FIG. 25A and FIG. 25B, a metal catalyst film 42 isformed over the entire surface, so as to fill up the openings 41 a. Themetal catalyst film 42 can be formed by a CVD process, a PVD process, aplating process or the like.

Next, as shown in FIG. 26A and FIG. 26B, the metal catalyst film 42 andthe insulating film 41 are planarized by CMP or the like, so that adesired height of the film 42 is attained in the openings 41 a. If thethickness of the insulating film 41 is preliminarily adjusted to theheight of the dot patterns to be formed, the planarization can beterminated just when the insulating film 41 is exposes.

Thereafter, as shown in FIG. 27A and FIG. 27B, an interlayer insulatingfilm 43 is formed over the entire surface, to thereby obtain a structureequivalent to that shown in FIG. 2A and FIG. 2B.

By adopting the damascene process as described above, the dot patternshaving a desired geometry can be formed in a relatively easy manner,even when the materials such as Co, Ni, Fe or the like, which arerelatively hard-to-etch materials, is used.

In a case where the carbon nanotubes composing the wirings and thevia-plugs have a sufficiently large strength, the interlayer insulatingfilms are omissible between the wirings, as shown in FIG. 28. In otherwords, a plurality of origin patterns 106 containing metal catalyst anda plurality of wirings and the via-plugs 108 composed of the carbonnanotubes may be exposed. This structure can be obtained by constructinga stacked structure similar to that shown in FIG. 11, and then bycarrying out isotropic wet etching using, for example, a hydrofluoricacid series chemical solution. It is, however, necessary to leave theinterlayer insulating film 104 unremoved, so that it is preferable toform an etching stopper layer 110 composed of silicon nitride film orthe like, so as to cover the interlayer insulating film 104.

Third Embodiment

Next, a third embodiment of the present invention will be explained. Inthis embodiment, a field effect transistor having a channel composed ofzigzag-type carbon nanotubes will be formed. FIG. 29A and FIG. 29B toFIG. 40A and FIG. 40B are drawings sequentially showing process steps ofa method of manufacturing a semiconductor device according to the thirdembodiment of the present invention. FIG. 29B to FIG. 40B are sectionalviews taken along line II-II in FIG. 29A to FIG. 40A, respectively.

In the third embodiment, first, as shown in FIG. 29A and FIG. 29B, a Sioxide film 52 is formed on a semiconductor substrate 51 with using TEOSor the like. Next, on the Si oxide film 52, dot patterns 53 composed ofa metal catalyst for the carbon nanotubes are formed. Examples of themetal catalyst include cobalt (Co), nickel (Ni), iron (Fe) and so forth.Positions of formation of the dot patterns 53 are adjusted to thesources and the drains of the transistors to be formed. Sectionalgeometry involving height and width, for example, of the dot patterns 53is determined based on thickness of the channel of the transistor to beformed, density, and so forth.

Next, as shown in FIG. 30A and FIG. 30B, an insulating film 54 coveringthe dot patterns 53 is formed with using TEOS or the like, and thesurface of the film is then planarized by CMP or the like.

Thereafter, as shown in FIG. 31A and FIG. 31B, trenches 54 a are formedin the insulating film 54 at positions destined for formation of thechannel by dry etching, for example. This process is proceeded,similarly to as in the first embodiment, so as to expose the side facesof the dot patterns 53 from both ends of each trench 54 a. This isbecause the side faces of the dot patterns 53 can serve as the originsof growth of the carbon nanotubes. In consideration of alignmentaccuracy in the process of forming the trenches 54 a, it is preferableto adopt a design in which both ends of the trenches 54 a fall on thetop surfaces of the dot patterns 53. In other words, it is preferable toadopt a design in which the dot patterns 53 are slightly exposed outfrom the trenches 54. By adopting this design, the side faces of the dotpatterns 3 can exactly be exposed, even if any slight misalignmentoccurs.

In a case where polymers or oxide of the metal catalysts adhere on theside faces of the dot patterns 53 after formation of the trenches 54 a,it is preferable, as the occasion demands, to carry out isotropicetching (plasma treatment or wet treatment), similarly to as in thefirst embodiment.

Thereafter, as shown in FIG. 32A and FIG. 32B, carbon nanotubes 55 aregrown as being originated from the dot patterns 53 by a thermal CVDprocess or a plasma CVD process. In this process, a part of the carbonnanotubes 55 grows between the opposing dot patterns 53, but anotherpart of the carbon nanotubes 55 grows upward from the top surfaces ofthe dot patterns 3.

Next, as shown in FIG. 33A and FIG. 33B, a protective film 56 protectingthe carbon nanotubes 55 from any damages possibly caused by CMP carriedout later is formed. As the protective film 56, a silicon nitride filmor a conductive film is preferably formed, in view of avoiding oxidationof the carbon nanotubes 55. It is also allowable to form an insulatingfilm by sputtering. In view of paying more attention to oxidation of thecarbon nanotubes 55, it is also allowable to use a silicon oxide film asthe protective film 56.

The protective film 56 is omissible, if the carbon nanotubes 55 showenough strength against CMP.

Next, as shown in FIG. 34A and FIG. 34B, the insulating film 54, thecarbon nanotubes 55 and the protective film 56 are removed by CMP or thelike, until the dot patterns 53 are exposed. In a case where it isanticipated that the protective film 56 remained in the gap between thecarbon nanotubes 55 may adversely affect transistor characteristics, theresidual protective film 56 is preferably removed by wet treatment usinga hydrofluoric acid series chemical solution.

Next, as shown in FIG. 35A and FIG. 35B, a gate insulating film 57 isformed over the entire surface by a CVD process, for example.

Thereafter, as shown in FIG. 36A and FIG. 36B, gate electrodes 58 areformed on the gate insulating film 57. Width of the gate electrodes 58(gate length) may be shorter, or may be longer than length of the carbonnanotubes composing the channel.

Next, as shown in FIG. 37A and 3713, an interlayer insulating film 59covering the gate electrode 58 is formed with using TEOS or the like.

Next, as shown in FIG. 38A and FIG. 38B, openings (via-holes) 59 a areformed in the interlayer insulating film 59, so as to reach the dotpatterns 53. It is, however, not necessary to form the openings 59 a onall of the dot patterns.

Next, as shown in FIG. 39A and FIG. 39B, carbon nanotubes 60 arevertically grown by a thermal CVD process or a plasma CVD process, asbeing originated from the dot patterns 53. Thereafter, portions of thecarbon nanotubes 60 projected out from the interlayer insulating film 59are removed by CMP or the like. As a consequence, a structure having theopenings 59 a filled with the via-plugs is obtained. Next, on theinterlayer insulating film 59, dot patterns 61 composed of a metalcatalyst for the carbon nanotubes are formed. Positions of formation ofthe dot patterns 61 are adjusted to the sources and the drains of thetransistors to be formed. In this process, a part of the dot patterns 61may be formed on the carbon nanotubes 60.

Next, processes similar to those for forming the lower field effecttransistors are carried out. More specifically, as shown in FIG. 40A andFIG. 40B, an insulating film 62 is formed, trenches are formed therein,carbon nanotubes 63 are grown in the trenches, these are planarized,gate insulating films 64 are formed, and gate electrodes 65 are formedthereon. An interlayer insulating film 66 covering the gate electrodes65 is then formed. Thereafter, wirings and so forth are formed tothereby complete a semiconductor device.

According to the third embodiment as described above, the field effecttransistors having the channels composed of the carbon nanotubes canreadily be formed at desired positions with an excellent accuracy.Unlike formation on the surface of a Si substrate, they can be formed onvarious films, so that a plurality of field effect transistors can bearranged side by side, not only in the direction in parallel with thesurface of the substrate, but also in the vertical direction.

It is also allowable, as shown in FIG. 41, to form a metal catalystlayer 67 on the gate electrode 58, and to allow the carbon nanotubes 60to grow thereon. By adopting this structure and this method, the carbonnanotubes can be used also for wirings between the gates and thesources/drains. In this case, it is preferable to form a metal catalystlayer 68 on the gate electrodes 65 of the upper transistors, and toconnect them with further upper electrodes and wirings, using the carbonnanotubes. A sectional structure of the semiconductor device adoptingthis sort of method is shown in FIG. 42, for example.

Fourth Embodiment

Next, a fourth embodiment of the present invention will be explained.FIG. 43A and FIG. 43B to FIG. 45A and FIG. 45B are drawings sequentiallyshowing process steps of a method of manufacturing a semiconductordevice according to the fourth embodiment of the present invention. FIG.43B to FIG. 45B are sectional views, taken along line II-II in FIG. 43Ato FIG. 45A, respectively.

In the fourth embodiment, as shown in FIG. 43A and FIG. 43B, a Si oxidefilm 52 is formed on a semiconductor substrate 51, and dot patterns 71composed of a metal catalyst for carbon nanotubes are formed on the Sioxide film 52. Positions of formation of the dot patterns 71 areadjusted to the sources and the drains of transistors to be formed. Plangeometry of the dot patterns 53 is set larger than that of the finallyremained patterns. Next, an insulating film 72 covering the dot patterns71 is formed with using TEOS or the like, and the surface of the film isthen planarized by CMP or the like. Thereafter, trenches 72 a are formedin the insulating film 72 by dry etching, for example, at the positionsdestined for formation of the channels. In this process, similarly to asin the third embodiment, the trenches 72 are formed so that the sidefaces of the dot patterns 71 are exposed on both ends of the trenches 72a, and so that the both ends of the trenches 72 a fall on the topsurfaces of the dot patterns 71.

Next, as shown in FIG. 44A and FIG. 44B, the end portions of the dotpatterns 71 are isotropically recessed by wet etching or the like. As aconsequence, a gap is formed between the insulating film 72 and the Sioxide film 52.

Next, as shown in FIG. 45A and FIG. 45B, carbon nanotubes 73 are grownas being originated from the dot patterns 71, by a thermal CVD processor a plasma CVD process.

According to the fourth embodiment as described above, the carbonnanotubes 73 are almost unlikely to grow upward, and instead growbetween the opposed dot patterns 71 with a strong certainty. The carbonnanotubes 55 in the third embodiment grew also upward, because the dotpatterns 53 swelled out from the trenches 54 a. There is a possibilitythat the carbon nanotubes 55 could not thoroughly be grown in thehorizontal direction, as being affected by a taper angle and flatness ofthe side faces of the dot patterns 53. It is therefore necessary toremove unnecessary portions of the carbon nanotubes 55 in the laterprocess. In contrast to this, the carbon nanotubes 73 in the fourthembodiment are likely to grow in the horizontal direction, so that thereis no need of removing the unnecessary carbon nanotubes in the laterprocess.

Readiness of the horizontal growth of the carbon nanotubes 73 increasesas the amount of recessing of the dot patterns 71 increases. Ifdeformation of the trenches 71 a is anticipated in the process ofgrowing the carbon nanotubes 73, it is good enough to control thicknessof the insulating film.

The gate electrodes of the field effect transistors are not necessarilyformed on the gate insulating film, allowing adoption of the back gatestructure as shown in FIG. 46A and FIG. 46B. A method of obtaining thissort of structure is as follows. For example, a Si oxide film 52 isconfigured as a double-layered structure, wherein gate electrodes 81 areformed after the first layer has been formed. Next, a Si oxide film onthe second layer is formed, and thereafter a gate insulating film 82 isformed. The dot patterns 53 and the carbon nanotubes 55 are then formedsimilarly to as in the third embodiment. It is also allowable to adopt adamascene process, so as to bury the gate electrodes 81 in the Si oxidefilm 52.

The carbon nanotubes having a zigzag chirality are given as P-type intheir as-grown state. On the contrary, the carbon nanotubes annealed invacuo change their conductivity type into N-type. This phenomenon issupposed as being ascribable to presence or absence of oxygen adsorptionat the junction portions of the carbon nanotubes and the metal catalyst.In other words, it has been believed that the annealing in vacuo causeselimination of oxygen from the junction portion, and conversion intoN-type. By using this phenomenon, an inverter can be formed as shown inFIG. 47A to FIG. 47C.

In the transistors shown in FIG. 47A to FIG. 47C, the gate electrodesshared by these transistors corresponds to an input terminal, and thedrain (dot patterns 83 and 53) connected through the carbon nanotubes 60corresponds to an output terminal. The source (dot pattern 83) in theupper layer is applied with a positive voltage, and the source (dotpattern 53) in the lower layer is applied with a negative voltage.

This structure can be obtained by the following procedures, for example.

First, similarly to as in the third embodiment, the process steps up tothe formation of the interlayer insulating film 59 are carried out.Next, the interlayer insulating film 59 is planarized by CMP or thelike, until the gate electrodes 58 expose. Next, the gate insulatingfilm 81 is formed. Thereafter, via-plugs composed of the carbonnanotubes 60 are formed in the gate insulating film 81 and theinterlayer insulating film 59. The insulating film 82, the dot patterns83 and the carbon nanotubes 84 are then formed. Next, as shown in FIG.48, oxygen is eliminated by annealing in vacuo, to thereby convert theconductivity type of the carbon nanotubes 84 from P-type into N-type.Thereafter, an interlayer insulating film 85 is formed over the entiresurface. In thus-obtained inverter, the carbon nanotubes 55 show P-typeconductivity and the carbon nanotubes 84 show N-type conductivity, underno applied voltage. In other words, the lower transistor operates as anN-channel transistor, and the upper transistor operates as a P-channeltransistor.

Silicon-base integrated circuits are generally configured bytwo-dimensionally arranging a plurality of transistors so as to formcircuits such as inverters, whereas use of the transistors using thecarbon nanotubes as the channels makes it possible to arrange aplurality of transistors in the vertical direction as described above.This is ascribable to a large degree of freedom of carbon nanotubeswhich are not necessarily formed on the surface of substrates.

It has also been reported that the conductivity type of the carbonnanotubes returns back to P-type, when allowed to stand in the air afterannealing, due to re-adhesion of oxygen to the junction portion. It is,therefore, preferable that the annealing as shown in FIG. 48 isfollowed, for example, by in situ formation of an oxygen blocking film86 as shown in FIG. 49. By forming the oxygen blocking film 86, theconductivity type is successfully prevented from returning back due tothe re-adhesion of oxygen. The oxygen blocking film 86 functions also asa barrier against the oxidative atmosphere for forming the interlayerinsulating film 85 in the later process. As this sort of oxygen blockingfilm 86, those requiring no oxidative atmosphere for the formationthereof, and having therein only a small oxygen content are preferable.Silicon nitride film is one example.

It is to be understood that, making the sectional geometry of the originpattern reverse-tapered is effective also for the case where the channelcomposed of the carbon nanotubes is formed.

Species of the interlayer insulating film is not specifically limited,allowing use of a porous low dielectric constant film or the like,besides the Si oxide film.

INDUSTRIAL APPLICABILITY

As has been detailed in the above, according to the present invention,fine wirings and channels composed of carbon nanotubes can readily beformed with excellent accuracy.

1. A method of manufacturing a semiconductor device comprising the stepsof: forming a plurality of origin patterns containing a metal catalystover a semiconductor substrate; forming an insulating film covering saidorigin patterns; forming, in said insulating film, a trench allowing atboth ends thereof side faces of said origin patterns to expose; forminga wiring by allowing carbon nanotubes having a conductive chirality togrow in said trench; and forming an interlayer insulating film coveringsaid carbon nanotubes.
 2. The method of manufacturing a semiconductordevice according to claim 1, wherein said metal catalyst is at least onemetal selected from a group consisting of cobalt, nickel and iron. 3.The method of manufacturing a semiconductor device according to claim 1,further comprising the step of, prior to said step of forming aninterlayer insulating film, removing said carbon nanotubes grown at alevel above top surfaces of said origin patterns.
 4. The method ofmanufacturing a semiconductor device according to claim 1, furthercomprising the steps of, prior to said step of forming an interlayerinsulating film, forming a protective film covering said carbonnanotubes in said trench; and removing, by chemical mechanicalpolishing, said carbon nanotubes grown at a level above top surfaces ofsaid origin patterns and said protective film at the same time.
 5. Themethod of manufacturing a semiconductor device according to claim 1,further comprising the step of, prior to said step of forming aninterlayer insulating film, forming an anti-oxidation film preventingoxidation of said carbon nanotubes in said trench.
 6. The method ofmanufacturing a semiconductor device according to claim 1, furthercomprising the step of, prior to said step of forming an insulatingfilm, forming a growth suppressive film suppressing growth of carbonnanotubes from top surfaces of said origin patterns.
 7. The method ofmanufacturing a semiconductor device according to claim 1, wherein, assaid origin patterns, patterns each having a base, and a metal catalystfilm formed on a surface of said base are formed.
 8. The method ofmanufacturing a semiconductor device according to claim 7, as said base,one having a Ti-containing portion at a portion thereof in contact withsaid metal catalyst film is formed.
 9. The method of manufacturing asemiconductor device according to claim 1, a sectional geometry of saidorigin patterns is made reverse-tapered.
 10. The method of manufacturinga semiconductor device according to claim 1, wherein top surfaces ofsaid origin patterns are allowed to expose in said forming said trench;and said carbon nanotubes are allowed to grow also upward so as to formvia- plugs in said step of forming a wiring.
 11. A method ofmanufacturing a semiconductor device comprising the steps of: forming atleast two origin patterns containing a metal catalyst over asemiconductor substrate; forming an insulating film covering said originpatterns; forming, in said insulating film, a trench allowing at bothends thereof side faces of said origin patterns to expose; and forming achannel by allowing carbon nanotubes having a semiconductive chiralityto grow in said trench.
 12. The method of manufacturing a semiconductordevice according to claim 11, further comprising the steps of: forming agate insulating film on said carbon nanotubes; and forming a gate onsaid gate insulating film.
 13. The method of manufacturing asemiconductor device according to claim 11, further comprising the stepsof, prior to said step of forming origin patterns: forming a gate oversaid semiconductor substrate; and forming a gate insulating film on saidgate, wherein said origin patterns are formed on said gate insulatingfilm.
 14. The method of manufacturing a semiconductor device accordingto claim 11, further comprising the step of, prior to said step ofallowing said carbon nanotubes to grow, making end portions of saidorigin patterns to recess by isotropically etching said origin patternsthrough said trench.
 15. The method of manufacturing a semiconductordevice according to claim 12, further comprising the step of: forming aninterlayer insulating film covering said gate; planarizing saidinterlayer insulating film until said gate is exposed; forming a secondgate insulating film on said interlayer insulating film; formingopenings in said second gate insulating film and said interlayerinsulating film, so as to reach said origin patterns; forming via-plugsby allowing carbon nanotubes to grow in said opening; forming, on saidsecond gate insulating film, at least two second origin patternspartially in contact with said via-plugs; forming a second insulatingfilm covering said second origin patterns; forming, in said secondinsulating film, a second trench allowing at both ends thereof sidefaces of said origin patterns to expose; forming a second channel byallowing carbon nanotubes having a semiconductor chirality to grow insaid second trench.
 16. The method of manufacturing a semiconductordevice according to claim 12, forming a plurality of field effecttransistors arranged in a direction normal to a surface of saidsemiconductor substrate, by repeating a cycle from said step of formingorigin patterns to said step of forming a gate.
 17. The method ofmanufacturing a semiconductor device according to claim 13, forming aplurality of field effect transistors arranged in a direction normal toa surface of said semiconductor substrate, by repeating a cycle fromsaid step of forming a gate to said step of forming a channel.